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hexfet power mosfet notes through are on page 9 features and benefits applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters pqfn 5x6 mm absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.029 104 max. 26 85 640 16 4021 134 50 v w a c features benefits low r dson ( 4.7mw @ v gs = 4.5v ) lower conduction losses low thermal resistance to pcb (< 1.2c/w) enables better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability v ds 40 v r ds(on) max (@v gs = 10v) 3.3 m q g (typical) 39 nc i d (@t c(bottom) = 25c) 50 a
form quantity IRLH7134trpbf pqfn 5mm x 6mm tape and reel 4000 IRLH7134tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

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s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 1.2 r jc (top) junction-to-case CCC 30 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 40 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 37 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 2.8 3.3 m 3.9 4.9 v gs(th) gate threshold voltage 1.0 CCC 2.5 v ? v gs(th) gate threshold voltage coefficient CCC -5.6 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 120 CCC CCC s q g total gate charge CCC 39 58 q gs1 pre-vth gate-to-source charge CCC 9.0 CCC q gs2 post-vth gate-to-source charge CCC 4.5 CCC q gd gate-to-drain charge CCC 16 CCC q godr gate charge overdrive CCC 9.5 CCC q sw switch charge (q gs2 + q gd ) CCC 20.5 CCC q oss output charge CCC 23 CCC nc r g gate resistance CCC 0.6 CCC t d(on) turn-on delay time CCC 21 CCC t r rise time CCC 75 CCC t d(off) turn-off delay time CCC 18 CCC t f fall time CCC 13 CCC c iss input capacitance CCC 3720 CCC c oss output capacitance CCC 610 CCC c rss reverse transfer capacitance CCC 350 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 25 38 ns q rr reverse recovery charge CCC 74 110 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 100 a v gs = 4.5v typ. v ds = 40v, v gs = 0v v ds = 16v, v gs = 0v v dd = 20v, v gs = 10v v gs = 4.5v, i d = 40a CCC r g =1.7 v ds = 10v, i d = 50a v ds = 40v, v gs = 0v, t j = 125c a i d = 50a i d = 50a v gs = 0v v ds = 25v t j = 25c, i f = 50a, v dd = 20v di/dt = 400a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 125 50 ? = 1.0mhz conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 10v, i d = 50a CCC CCC 640 CCC CCC 50 mosfet symbol na ns a pf nc v ds = 20v CCC v gs = 16v v gs = -16v downloaded from: http:///
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15.0v 10.0v 4.50v 4.00v 3.30v 3.10v 2.90v bottom 2.70v 60 s pulse width tj = 25c 2.70v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15.0v 10.0v 4.50v 4.00v 3.30v 3.10v 2.90v bottom 2.70v 60 s pulse width tj = 150c 2.70v 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 04 06 08 01 0 0 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v vds= 8.0v i d = 50a downloaded from: http:///

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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 250 a i d = 1.0ma i d = 1.0a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) limited by package 100 sec 1msec 10msec dc downloaded from: http:///
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.5a 21a bottom 50a downloaded from: http:///
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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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pqfn 5x6 outline "e" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) downloaded from: http:///
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pqfn 5x6 outline "e" tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 ao ko dimension (mm) code min max dimension (inch) min max 6.20 6.40 .244 .252 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 5.20 5.40 .205 .213 description w 1 qty 4000 reel diameter 13 inches downloaded from: http:///
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qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.099mh, r g = 50 , i as = 50a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 50a by die-source to lead-frame bonding technology ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eo l notice #259) ? updated tape and reel on page 8. ? updated data sheet based on corporate template. 5/13/2014 downloaded from: http:///

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